2 1 3 20 3 . 8 0 . 2 ? 9 . 1 0 . 2 ? 8 . 1 0 . 1 w i ndow ? 5 . 9 0 . 1 5 . 08 0 . 2 sens i t i v e sur fac e ? 0 . 4 5 l e ad SMP550G-FJ prelim. 1/98 semelab plc. telephone (01455) 556565. telex: 341927. fax (01455) 552612. mechanical data dimensions in mm. p.i.n. photodiode description the SMP550G-FJ is a silicon p.i.n. photodiode incorporated in a hermetic metal can package. the electrical terminations are via two leads of diameter 0.018" on a pitch centre diameter of 0.2". the can structure permits a wide range of optical filter options. the photodiode is electrically isolated from the package, which has a separate earth lead. the larger photodiode active area provides greater sensitivity than the smp400 range of devices, with a corresponding reduction in speed. the photodiode structure has been optimised for high sensitivity, light measurement applications. the metal can, isolated photodiode and optional screening mesh ensure a rugged device with a high degree of immunity to conducted and radiated electrical interference. to-39 package operating temperature range storage temperature range temperature coefficient of responsively temperature coefficient of dark current reverse breakdown voltage -40c to +70c -45c to +80c 0.35% per c x2 per 8c rise 60v absolute maximum ratings (t case = 25c unless otherwise stated) features ? photodiode isolated from package ? excellent linearity ? low noise ? wide spectral response ? low leakage current ? low capacitance ? integral optical filter option note 1 ? to39 hermetic metal can package ? emi screening mesh available note 1 contact semelab plc for filter options pin 1 C anode pin 2 C cathode pin 3 C case
SMP550G-FJ prelim. 1/98 semelab plc. telephone (01455) 556565. telex: 341927. fax (01455) 552612. characteristic t est conditions. min. t yp. max. units responsiv ely activ e area dar k current breakdo wn v oltage capacitance rise time nep l at 900nm e = 0 dar k 1v re v erse e = 0 dar k 10v re v erse e = 0 dar k 10a re v erse e = 0 dar k 0v re v erse e = 0 dar k 20v re v erse 30v re v erse 50 w 900nm 0.45 0.55 5.19 2 4 16 22 60 80 55 10 9 19x10 -14 0.45 a/w mm 2 na v pf ns w/ ? hz chara cteristics (t amb =25c unless otherwise stated) d i r e c t i o n a l c h a r a c t e r i s t i c s 0 0 . 1 0 . 2 0 . 3 0 . 4 0 . 5 0 . 6 0 . 7 0 . 8 0 . 9 1 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 8 0 9 0 a n g l e f r o m s e n s o r t o i l l u m i n a t i o n d i r e c t i o n a l c h a r a c t e r i s t i c s 0 0 . 2 0 . 4 0 . 6 0 . 8 1 0 0 . 2 0 . 4 0 . 6 0 . 8 1 n o r m a l i s e d i n c i d e n t p o w e r 1 0 2 0 3 0 4 0 5 0 6 0 7 0 8 0 a n g l e f r o m s e n s o r t o i l l u m i n a t i o n s p e c t r a l r e s p o n s e 0 2 0 4 0 6 0 8 0 1 0 0 0 2 0 0 4 0 0 6 0 0 8 0 0 1 0 0 0 1 2 0 0 w a v e l e n g t h ( n m ) relative responsivity (%) normalised incident power
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